Stability and Reliability of Lateral GaN Power Field-Effect Transistors
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DOI: 10.1109/ted.2019.2931718
Abstract: GaN electronics constitutes a revolutionary technology with power handling capabilities that amply exceed those of Si and other semiconductors in many applications. RF, microwave, and millimeter-wave GaN-based power amplifiers are now deployed in commercial communications,… read more here.
Keywords: stability reliability; power; field effect; gan power ... See more keywords