Low power fluorine plasma effects on electrical reliability of AlGaN/GaN high electron mobility transistor
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DOI: 10.1088/1674-1056/26/1/017304
Abstract: The new electrical degradation phenomenon of the AlGaN/GaN high electron mobility transistor (HEMT) treated by low power fluorine plasma is discovered. The saturated current, on-resistance, threshold voltage, gate leakage and breakdown voltage show that each… read more here.
Keywords: gan high; algan gan; power fluorine; fluorine ... See more keywords