Degradation indicators of power-GaN-HEMT under switching power-cycling
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DOI: 10.1016/j.microrel.2019.113412
Abstract: Abstract This paper describes the design of a power-cycling test bench to study the reliability of power-GaN-HEMT power switches. The aim of the presented paper is to study the measurable electrical consequences of internal degradation… read more here.
Keywords: degradation; power; power cycling; degradation indicators ... See more keywords
Power GaN FET boards thermal and electromagnetic optimization by FE modeling
Sign Up to like & getrecommendations! Published in 2019 at "Microelectronics Reliability"
DOI: 10.1016/j.microrel.2019.113466
Abstract: Abstract This work deals with optimization of boards with commercial discrete power GaN FETs in applications where natural air convection is a strict constraint. In these cases, both thermal and electromagnetic behaviours are critical reliability… read more here.
Keywords: thermal electromagnetic; power gan; gan fet; electromagnetic optimization ... See more keywords