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Published in 2019 at "IET Electric Power Applications"
DOI: 10.1049/iet-epa.2018.5725
Abstract: In order to accurately estimate the temperature rise for high-power high-speed permanent magnet machines (HSPMMs), a novel temperature calculation method considering the non-linear variation of material properties with temperature is proposed based on multi-physics co-simulation…
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Keywords:
field;
high power;
temperature;
fluid ... See more keywords
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Published in 2018 at "Physics of Plasmas"
DOI: 10.1063/1.5041860
Abstract: To reduce the size and the weight of the relativistic magnetron (RM), a highly compact RM using an all cavity extraction and transparent cathode is investigated. Compared with the traditional RM design [Sayapin et al.,…
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Keywords:
high efficiency;
high power;
relativistic magnetron;
power ... See more keywords
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Published in 2019 at "Applied Physics Letters"
DOI: 10.1063/1.5080266
Abstract: We report on the fabrication of high-power, high-spectral-purity GaSb-based laterally coupled distributed feedback (LC-DFB) lasers emitting at 2 μm. Second-order Chromium-Bragg-gratings are fabricated alongside the ridge waveguide by lift off. Due to the introduction of gain…
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Keywords:
high spectral;
high power;
mode;
spectral purity ... See more keywords
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Published in 2023 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/acca9d
Abstract: Conventional silicon (Si)-based power devices face physical limitations—such as switching speed and energy efficiency—which can make it difficult to meet the increasing demand for high-power, low-loss, and fast-switching-frequency power devices in power electronic converter systems.…
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Keywords:
gan based;
power high;
mobility;
power ... See more keywords
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Published in 2019 at "Journal of Low Power Electronics and Applications"
DOI: 10.3390/jlpea9030021
Abstract: Due to the reduction in technology scaling, gate capacitance and charge storage in sensitive nodes are rapidly decreasing, making Complementary Metal Oxide Semiconductor (CMOS) circuits more sensitive to soft errors caused by radiation. In this…
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Keywords:
single event;
latch;
power;
low power ... See more keywords
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2
Published in 2022 at "Micromachines"
DOI: 10.3390/mi13091554
Abstract: This study optimized the field plate (FP) design (i.e., the number and positions of FP layers) of p-GaN power high-electron-mobility transistors (HEMTs) on the basic of simulations conducted using the technology computer-aided design software of…
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Keywords:
power high;
gan power;
design;
field plate ... See more keywords