High-Power InP-Based Waveguide Integrated Modified Uni-Traveling-Carrier Photodiodes
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DOI: 10.1109/jlt.2016.2591266
Abstract: We demonstrate monolithic InP-based high-power high-speed waveguide integrated single and balanced modified UTC photodetectors. The single PD chip generates maximum RF output power levels of 8.9 dBm to 5.1 dBm in the frequency range between 60 GHz and… read more here.
Keywords: high power; based waveguide; waveguide integrated; power ... See more keywords