Quantitative fractography analysis of a chip crack in a Si power MOSFET
Sign Up to like & getrecommendations! Published in 2019 at "Microelectronics Reliability"
DOI: 10.1016/j.microrel.2019.06.053
Abstract: Abstract When a material breaks and a crack forms, the resulting fracture surface will, in most cases, exhibit characteristic fracture marks. Their examination and interpretation, known as fractography analysis, can deliver useful insights about crack… read more here.
Keywords: power mosfet; analysis; fractography analysis; crack ... See more keywords
High performance selective buried double gate power MOSFET
Sign Up to like & getrecommendations! Published in 2019 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/ab0c2f
Abstract: In this letter, we propose a dual laterally aligned poly-silicon selective buried gates power MOSFET (SBGP-MOSFET). The proposed structure significantly improves the ON resistance (R on)-breakdown voltage tradeoff, reduces gate-drain capacitance (C GD) and eliminates… read more here.
Keywords: gate drain; power mosfet; selective buried; gate ... See more keywords
Single-event burnout hardening of planar power MOSFET with partially widened trench source
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Semiconductors"
DOI: 10.1088/1674-4926/39/3/034003
Abstract: We present a single-event burnout (SEB) hardened planar power MOSFET with partially widened trench sources by three-dimensional (3D) numerical simulation. The advantage of the proposed structure is that the work of the parasitic bipolar transistor… read more here.
Keywords: planar power; power; power mosfet; single event ... See more keywords
A SiC Power MOSFET Loss Model Suitable for High-Frequency Applications
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Industrial Electronics"
DOI: 10.1109/tie.2017.2703910
Abstract: The reduced chip size and unipolar current conduction mechanism make silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors (MOSFETs) suitable for high-frequency power electronics applications. Modeling the switching process of the SiC power MOSFET with parasitic components… read more here.
Keywords: high frequency; suitable high; power; power mosfet ... See more keywords
Ion-Induced Mesoplasma Formation and Thermal Destruction in 4H-SiC Power MOSFET Devices
Sign Up to like & getrecommendations! Published in 2021 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2021.3068196
Abstract: Both experiments and simulations have shown that single-event burnout (SEB), a catastrophic event, occurs at less than half of the rated blocking voltage in commercial 4H-SiC power devices under a heavy-ion strike. The failure was… read more here.
Keywords: power mosfet; mesoplasma formation; failure; ion ... See more keywords