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   Articles with "power mosfets" as a keyword



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Gate-damage accumulation and off-line recovery in SiC power MOSFETs with soft short-circuit failure mode

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recommendations! Published in 2020 at "Microelectronics Reliability"

DOI: 10.1016/j.microrel.2020.113943

Abstract: Abstract This paper proposes the detailed analysis of the short-circuit failure mechanism of a particular class of silicon carbide (SiC) power MOSFETs, exhibiting a safe fail-to-open-circuit type signature. The results are based on extensive experimental… read more here.

Keywords: short circuit; circuit; circuit failure; power mosfets ... See more keywords
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Design and simulation of 3C-SiC vertical power MOSFETs

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recommendations! Published in 2020 at "International Journal of Electronics"

DOI: 10.1080/00207217.2020.1818843

Abstract: ABSTRACT This paper reports on the design and simulation of 3C-SiC low-doped drain power MOSFETs, including key parameters such as the avalanche impact ionisation model and its relation to the breakdown voltage, the doping dependence… read more here.

Keywords: layer; simulation sic; power mosfets; simulation ... See more keywords

SEGR- and SEB-hardened structure with DSPSOI in power MOSFETs

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recommendations! Published in 2017 at "Journal of Semiconductors"

DOI: 10.1088/1674-4926/38/12/124006

Abstract: Single event irradiation-hardened power MOSFET is the most important device for DC/DC converter in space environment application. Single event gate rupture (SEGR) and single event burnout (SEB), which will degrade the running safety and reliability… read more here.

Keywords: power; single event; structure; power mosfets ... See more keywords

2.3 kV 4H-SiC Accumulation-Channel Split-Gate Planar Power MOSFETs With Reduced Gate Charge

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recommendations! Published in 2020 at "IEEE Journal of the Electron Devices Society"

DOI: 10.1109/jeds.2020.2991355

Abstract: 2.3 kV 4H-SiC split-gate (SG) planar accumulation-channel power MOSFETs have been successfully manufactured in a 6 inch commercial foundry with good parametric distributions. The measured electrical characteristics of these devices are compared with conventional ACCUFETs… read more here.

Keywords: split gate; power mosfets; gate charge; accumulation channel ... See more keywords

Review of Methodologies for Evaluating Short-Circuit Robustness and Reliability of SiC Power MOSFETs

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recommendations! Published in 2022 at "IEEE Journal of Emerging and Selected Topics in Power Electronics"

DOI: 10.1109/jestpe.2021.3136746

Abstract: To accelerate the broad application of silicon carbide (SiC) power MOSFETs, their short-circuit (SC) robustness and reliability must be thoroughly evaluated. This article, therefore, presents an overview of related research methods aiming to meet that… read more here.

Keywords: short circuit; circuit robustness; power; reliability ... See more keywords

Displacement Damage and Total Ionizing Dose Induced by 3-MeV Protons in SiC Vertical Power MOSFETs

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recommendations! Published in 2025 at "IEEE Transactions on Nuclear Science"

DOI: 10.1109/tns.2024.3505058

Abstract: The radiation effects in SiC power MOSFETs induced by 3-MeV protons at high fluence are evaluated. Significant parametric shifts are observed due to displacement damage (DD) and total ionizing dose (TID) depending on the bias… read more here.

Keywords: damage total; displacement damage; power mosfets; mev protons ... See more keywords
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A New User-Configurable Method to Improve Short-Circuit Ruggedness of 1.2-kV SiC Power MOSFETs

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recommendations! Published in 2021 at "IEEE Transactions on Power Electronics"

DOI: 10.1109/tpel.2020.3010154

Abstract: Silicon carbide (SiC) power MOSFETs have been commercialized to replace silicon insulated gate bipolar transistors (IGBTs) in power conversion applications. However, the short-circuit ruggedness of SiC power MOSFETs must be enhanced to match that of… read more here.

Keywords: power mosfets; power; short circuit; sic power ... See more keywords

Review on the Reliability Mechanisms of SiC Power MOSFETs: A Comparison Between Planar-Gate and Trench-Gate Structures

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recommendations! Published in 2023 at "IEEE Transactions on Power Electronics"

DOI: 10.1109/tpel.2023.3265864

Abstract: To clarify the current research situation and offer a better understanding of the reliability for silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (mosfets), a comparison among the reliability mechanisms between planar-gate (PG) and trench-gate (TG)… read more here.

Keywords: power; reliability; mosfets comparison; sic power ... See more keywords

Modeling and Analysis of Monitoring Gate-Oxide Degradation of SiC Power MOSFETs in Circuit by the Fingerprints of Voltage Switching Transient

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recommendations! Published in 2024 at "IEEE Transactions on Power Electronics"

DOI: 10.1109/tpel.2024.3446241

Abstract: In this article, we have investigated the sensing principle and method of gate-oxide degradation of SiC power mosfets based on fingerprints of voltage switching transient. The modeling of the voltage switching rate during the turn-on… read more here.

Keywords: degradation; power mosfets; sic power; voltage switching ... See more keywords
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Performance Degradation of Automotive Power MOSFETs Under Repetitive Avalanche Breakdown Test

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recommendations! Published in 2021 at "IEEE Transactions on Transportation Electrification"

DOI: 10.1109/tte.2020.3009093

Abstract: Avalanche ruggedness is one of the key factors for safe and reliable power converters deployed in various automotive subsystems. In this article, the avalanche capability of power MOSFETs is tested under different repetitive avalanche conditions… read more here.

Keywords: performance degradation; avalanche; power mosfets; degradation ... See more keywords

A Comprehensive Study on the Avalanche Breakdown Robustness of Silicon Carbide Power MOSFETs

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recommendations! Published in 2017 at "Energies"

DOI: 10.3390/en10040452

Abstract: This paper presents an in-depth investigation into the avalanche breakdown robustness of commercial state-of-the-art silicon carbide (SiC) power MOSFETs comprising of functional as well as structural characterization and the corresponding underlying physical mechanisms responsible for… read more here.

Keywords: breakdown robustness; avalanche breakdown; silicon carbide; power mosfets ... See more keywords