High-Photoresponsivity Self-Powered a-, ε-, and β-Ga2O3/p-GaN Heterojunction UV Photodetectors with an In Situ GaON Layer by MOCVD.
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DOI: 10.1021/acsami.2c06927
Abstract: In this paper, self-powered ultraviolet (UV) photodetectors with high response performance based on Ga2O3/p-GaN were fabricated by metal-organic chemical vapor deposition (MOCVD). The effects of different crystal phases of Ga2O3 (including a, ε, ε/β, and… read more here.
Keywords: mocvd; self powered; ga2o3 gan; powered ga2o3 ... See more keywords