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Published in 2025 at "Scientific Reports"
DOI: 10.1038/s41598-025-13658-0
Abstract: Accurate extraction of mobility parameters in two-dimensional (2D) transition metal dichalcogenide (TMD)-based field-effect transistors (FETs) is crucial for evaluating their performance and optimizing device design. Conventional mobility extraction methods such as the field-effect mobility approach…
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Keywords:
methodology;
mobility;
precise mobility;
advanced polynomial ... See more keywords