Precision etching for multi-level AlGaAs waveguides
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DOI: 10.1364/ome.7.000895
Abstract: We present inductively-coupled-plasma, reactive-ion-etching (ICP-RIE) techniques with 2 orders of magnitude difference in etch rates, for the AlxGa1-xAs material system. These precise etching processes are used to produce waveguides in a multi-guide vertical integration (MGVI)… read more here.
Keywords: etching multi; multi level; alxga1 xas; xas ... See more keywords