Prediction of Electromagnetic Interference Noise in SiC MOSFET Module
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DOI: 10.1109/tcsii.2019.2908971
Abstract: Silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) are new generation of power semiconductor devices with higher slew rates. During switching transient process, undesirable switching oscillations occurs in SiC MOSFET modules due to… read more here.
Keywords: noise sic; interference noise; electromagnetic interference; prediction electromagnetic ... See more keywords