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Published in 2018 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2018.2792221
Abstract: An extensive investigation of the preexisting and generated defects in amorphous-Si/TiO2-based nonfilamentary a-vacancy modulated conductive oxide RRAM devices has been carried out in this paper to identify the switching and degradation mechanisms, through a combination…
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Keywords:
preexisting generated;
generated defects;
rtn amplitude;
investigation preexisting ... See more keywords