Preparation of In2O3 Thin Film and The Study of Gas Sensitivity to Ethanol
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DOI: 10.1080/10584587.2019.1592598
Abstract: Abstract In2O3 film was prepared by magnetron sputtering technology on rough surface Si (100) substrates. The results show that the film grown at the sputtering gas pressure of 0.6 Pa, the temperature of 600 °C, and the… read more here.
Keywords: preparation in2o3; gas; sensitivity; film ... See more keywords