Cationic compositional effects on the bias-stress stabilities of thin film transistors using In–Ga–Zn–O channels prepared by atomic layer deposition
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DOI: 10.1039/c9tc01164a
Abstract: Cationic compositional effects of amorphous In–Ga–Zn–O (a-IGZO) prepared by atomic layer deposition (ALD) were strategically investigated for thin film transistor applications. read more here.
Keywords: prepared atomic; cationic compositional; thin film; atomic layer ... See more keywords
Effective Oxygen-Defect Passivation in ZnO Thin Films Prepared by Atomic Layer Deposition Using Hydrogen Peroxide
Sign Up to like & getrecommendations! Published in 2019 at "Journal of the Korean Ceramic Society"
DOI: 10.4191/kcers.2019.56.3.11
Abstract: The intrinsic oxygen-vacancy defects in ZnO have prevented the preparation of p-type ZnO with high carrier concentration. Therefore, in this work, the effect of the concentration of H2O2 (used as an oxygen source) on the… read more here.
Keywords: prepared atomic; atomic layer; oxygen vacancy; oxygen ... See more keywords