Si/SiC heterojunction prepared by metal induced crystallization of amorphous silicon
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DOI: 10.1016/j.matlet.2016.11.079
Abstract: Abstract In this work, amorphous Si films were prepared on 6H-SiC(0001) by PECVD and induced to be crystalline structure at 400 °C~700 °C by Ni to form c-Si/6H-SiC heterojunction. Raman and XRD results indicated that ɑ-Si films… read more here.
Keywords: crystallization; prepared metal; metal induced; heterojunction prepared ... See more keywords