Recrystallization of Si Nanoparticles in Presence of Chalcogens: Improved Electrical and Optical Properties
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DOI: 10.3390/ma15248842
Abstract: Nanocrystals of Si doped with S, Se and Te were synthesized by annealing them in chalcogen vapors in a vacuum at a high temperature range from 800 to 850 °C. The influence of the dopant… read more here.
Keywords: chalcogens improved; presence; recrystallization nanoparticles; improved electrical ... See more keywords