Structure and magnetostriction in (Tb0.2Pr0.8) Dy1Fe1.93 Laves compounds synthesised by high-pressure annealing
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DOI: 10.1016/j.materresbull.2018.12.025
Abstract: Abstract A series of (Tb0.2Pr0.8)xDy1-xFe1.93 (0.3 ≤ x ≤ 1.0) Laves compounds was prepared using a high-pressure annealing method. These compounds exhibit a multiphase behaviour when prepared by traditional annealing methods whereas they present a single Laves phase when… read more here.
Keywords: laves compounds; high pressure; magnetostriction; tb0 2pr0 ... See more keywords
Impacts of ultra-high-pressure annealing on undoped and ion-implanted GaN studied by photoluminescence measurements
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DOI: 10.1063/5.0266700
Abstract: Selective-area doping of GaN using ion implantation (I/I) followed by ultra-high-pressure annealing (UHPA) under 1-GPa-N2 has emerged as a promising technique for GaN power devices. In this article, the impacts of UHPA on the midgap… read more here.
Keywords: implanted gan; pressure annealing; ultra high; ion ... See more keywords
Influence of High-Pressure Annealing on Memory Properties of Hf0.5Zr0.5O2 Based 1T-FeRAM
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DOI: 10.1109/led.2019.2918797
Abstract: We investigated the impact of high-pressure annealing (HPA) on the memory properties of one-transistor dynamic random-access memory (1TDRAM) using a coupled geometry of a metal-ferroelectric (Hf0.5Zr0.5O2)-metal (MFM) capacitor connected in series with a gate insulator… read more here.
Keywords: high pressure; memory; hf0 5zr0; memory properties ... See more keywords