Primary intrinsic defects and their charge transition levels in β–Ga2O3
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DOI: 10.1103/physrevmaterials.4.074605
Abstract: A steady-state photocapacitance (SSPC) setup directly connected to the beamline of a MeV ion implanter is utilized to study primary intrinsic defects in $\ensuremath{\beta}\text{--}{\mathrm{Ga}}_{2}{\mathrm{O}}_{3}$ generated by He implantation at cryogenic temperatures (120 K). At low… read more here.
Keywords: text mathrm; intrinsic defects; ensuremath; primary intrinsic ... See more keywords