Low temperature atomic layer deposition of zirconium oxide for inkjet printed transistor applications
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DOI: 10.1039/c8ra08470j
Abstract: We report the growth of zirconium oxide (ZrO2) as a high-k gate dielectric for an inkjet-printed transistor using a low-temperature atomic layer deposition (ALD) from tetrakis(dimethylamido)zirconium (TDMAZr) and water precursors. read more here.
Keywords: zirconium oxide; printed transistor; temperature atomic; inkjet printed ... See more keywords