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Published in 2020 at "Solar Energy"
DOI: 10.1016/j.solener.2020.09.085
Abstract: Abstract n-Mg2Si/p-Si heterojunction solar cell with a 1.4 µm thick unintentionally doped (n = 3 × 1017 cm−3) silicide epitaxial layer on p-Si(1 1 1) (p = 5 × 1014 cm−3) was grown by low temperature (250 °C) molecular beam epitaxy. Heterojunction demonstrated clear rectification and zero bias photoresponse…
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Keywords:
heterojunction photovoltaic;
mg2si heterojunction;
probing mg2si;
heterojunction ... See more keywords