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Published in 2022 at "IEEE Access"
DOI: 10.1109/access.2022.3183137
Abstract: Soft errors, aging effects and process variations have become the three most critical reliability issues for nanoscale complementary metal oxide semiconductor (CMOS) circuits. In this paper, the effects of bias temperature instability (BTI) and process…
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Keywords:
process variations;
synergistic effect;
bti process;
effect ... See more keywords
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Published in 2017 at "IEEE Transactions on Components, Packaging and Manufacturing Technology"
DOI: 10.1109/tcpmt.2016.2628703
Abstract: Fabrication process variations are a major source of yield degradation in the nanoscale design of integrated circuits (ICs), microelectromechanical systems (MEMSs), and photonic circuits. Stochastic spectral methods are a promising technique to quantify the uncertainties…
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Keywords:
big data;
high dimensional;
process variations;
uncertainty quantification ... See more keywords
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Published in 2019 at "IEEE Transactions on Device and Materials Reliability"
DOI: 10.1109/tdmr.2019.2933998
Abstract: Aggressive technology scaling has led to significant increase in manufacturing process variations as well as transistors aging effects. In this paper, the impacts of process variations and aging mechanisms on lifetime reliability of flip-flops (FFs)…
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Keywords:
impacts process;
lifetime reliability;
variations aging;
process variations ... See more keywords
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3
Published in 2022 at "IEEE Transactions on Very Large Scale Integration (VLSI) Systems"
DOI: 10.1109/tvlsi.2021.3135502
Abstract: Carbon nanotube field-effect transistors (CNFETs) emerge as a promising alternative to CMOS transistors for the much higher speed and energy efficiency, which makes the technology particularly suitable for building the energy-hungry last-level cache (LLC). However,…
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Keywords:
last level;
cache;
level cache;
process variations ... See more keywords