The Impact of Solvents on the Performances of Solution‐Processed Indium Gallium Zinc Oxide Thin‐Film Transistors Using Nitrate Ligands
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DOI: 10.1002/adem.201901053
Abstract: Herein, solution‐processed indium gallium zinc oxide (IGZO) thin‐film transistor (TFT) is fabricated utilizing metal nitrates as precursors, and the impact of nitrate ions in different solvents on the performances of IGZO TFT is demonstrated. During… read more here.
Keywords: solution processed; indium gallium; igzo; film ... See more keywords