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Published in 2018 at "Semiconductors"
DOI: 10.1134/s1063782618160297
Abstract: Two different approaches for the etching of the gallium nitride epitaxial layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy have been elaborated. It is demonstrated that anisotropic etch profiles can be achieved by…
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Keywords:
epitaxial structures;
111 epitaxial;
chemical etching;
structures mems ... See more keywords