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Published in 2019 at "Microelectronic Engineering"
DOI: 10.1016/j.mee.2019.04.023
Abstract: Abstract P- and n-doped bismuth telluride (Bi2Te3) polycrystalline nanostructures were prepared on structured PECVD-oxide-layers using magnetron sputtering and a lithography independent deposition and back-etching step. The resulting polycrystalline spacer-structures have adjustable dimensions with heights of…
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Keywords:
production polycrystalline;
electrical conductivity;
bi2te3;