A New Physical Understanding of Lateral Step Doping Technique via Effective Concentration Profile Concept
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DOI: 10.1109/ted.2019.2903346
Abstract: The drift region doping profile plays a significant role in affecting the performance of lateral power devices on silicon-on-insulator (SOI) substrate. However, due to the modeling difficulty of the 2-D solution, the physical meaning of… read more here.
Keywords: doping profile; profile; concentration profile; effective concentration ... See more keywords