Multi-Grid Capacitive Transducers for Measuring the Surface Profile of Silicon Wafers
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DOI: 10.3390/mi14010122
Abstract: The measurements of wafers’ surface profile are crucial for safeguarding the fabrication quality of integrated circuits and MEMS devices. The current techniques measure the profile mainly by moving a capacitive or optical spacing sensing probe… read more here.
Keywords: measuring surface; surface profile; profile silicon;