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Published in 2020 at "Semiconductors"
DOI: 10.1134/s1063782620010108
Abstract: Abstract Methods of micro-profiling of 4 H -SiC are described: formation of mesa structures with inclined walls (off-vertical wall inclination angle exceeding 45°) by reactive ion etching; etching of mesa structures with a flat bottom…
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Keywords:
profiling sic;
micro profiling;
form schottky;
etching form ... See more keywords