Modeling of program Vth distribution for 3-D TLC NAND flash memory
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DOI: 10.1007/s11432-018-9490-1
Abstract: This paper proposes a simulation method to model the program Vth distribution of 3-D vertical channel TLC/QLC charge-trapping NAND flash memory. The program Vth distribution can be calculated by considering ISPP noise, WL-WL interference, and… read more here.
Keywords: vth distribution; program vth; nand flash;