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Published in 2019 at "Science China Information Sciences"
DOI: 10.1007/s11432-018-9490-1
Abstract: This paper proposes a simulation method to model the program Vth distribution of 3-D vertical channel TLC/QLC charge-trapping NAND flash memory. The program Vth distribution can be calculated by considering ISPP noise, WL-WL interference, and…
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Keywords:
vth distribution;
program vth;
nand flash;