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Published in 2024 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.3c17282
Abstract: Integrating ferroelectric AlScN with III-N semiconductors to enhance the performance and tunability of nitride devices requires high-quality AlScN films. This work focuses on the effect and regulation mechanism of post-annealing in pure N2 on the…
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Keywords:
ferroelectric properties;
effect regulation;
properties alscn;
alscn films ... See more keywords
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Published in 2024 at "Materials horizons"
DOI: 10.1039/d4mh00551a
Abstract: While aluminum scandium nitride based ferroelectric materials have shown significant promise for non-volatile memory applications, difficulties relating challenges in device performance, such as electrical leakage, to structural characteristics motivate improved understanding of the fundamental structure-property…
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Keywords:
effect;
ferroelectric properties;
properties alscn;
spatial distribution ... See more keywords