Impact of iron atoms on electronic properties of FZ n-Si with dislocations
Sign Up to like & getrecommendations! Published in 2019 at "Physica B: Condensed Matter"
DOI: 10.1016/j.physb.2019.06.007
Abstract: Abstract Impact of iron atoms on electronic properties of FZ n-Si containing dislocations introduced by plastic deformation is studied using deep level transient spectroscopy (DLTS) and laser beam induced current (LBIC). Amplitudes of dislocation related… read more here.
Keywords: properties dislocations; atoms electronic; electronic properties; iron atoms ... See more keywords
Recombination properties of dislocations in GaN
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DOI: 10.1063/1.4995580
Abstract: The recombination activity of threading dislocations in n-GaN with different dislocation densities and different doping levels was studied using electron beam induced current (EBIC). The recombination velocity on a dislocation, also known as the dislocation… read more here.
Keywords: dislocation; dislocations gan; properties dislocations; recombination ... See more keywords