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Published in 2025 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/add6ce
Abstract: This study reports the structural and optical characterisation of GaN layers grown on β-Ga2O3 substrates using a three-step facet-controlled MOVPE growth process. Surface morphology was analyzed using AFM and SEM, while high-resolution XRD provided insights…
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Keywords:
controlled movpe;
structural optical;
properties facet;
facet controlled ... See more keywords