Study on the optical properties of β-Ga2O3 films grown by MOCVD
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Materials Science: Materials in Electronics"
DOI: 10.1007/s10854-017-6882-x
Abstract: Abstractβ-Ga2O3 films were grown on c-plane sapphire substrates at different substrate temperatures by metal-organic chemical vapor deposition. The effects of substrate temperature on transparence, optical band gap and photoluminescence of the films were studied systematically.… read more here.
Keywords: temperature; study optical; optical properties; ga2o3 films ... See more keywords
Use of mist chemical vapor deposition to impart ferroelectric properties to ε-Ga2O3 thin films on SnO2/c-sapphire substrates
Sign Up to like & getrecommendations! Published in 2018 at "Materials Letters"
DOI: 10.1016/j.matlet.2018.08.082
Abstract: Abstract e-Ga2O3 has a polar crystal structure with non-inversion-symmetry along the direction of the c-axis. In a previous study, the ferroelectric hysteresis loop of e-Ga2O3 was successfully measured using a planar-plate capacitor comprising a thick… read more here.
Keywords: thin films; ferroelectric properties; ga2o3 thin; properties ga2o3 ... See more keywords
Electronic, Thermal, and Thermoelectric Transport Properties of ε-Ga2O3 from First Principles
Sign Up to like & getrecommendations! Published in 2022 at "ACS Omega"
DOI: 10.1021/acsomega.1c06367
Abstract: The electronic, thermal, and thermoelectric transport properties of ε-Ga2O3 have been obtained from first-principles calculation. The band structure and electron effective mass tensor of ε-Ga2O3 were investigated by density functional theory. The Born effective charge… read more here.
Keywords: thermal thermoelectric; thermoelectric transport; transport properties; properties ga2o3 ... See more keywords
Band offsets and electronic properties of the Ga2O3/FTO heterojunction via transfer of free-standing Ga2O3 onto FTO/glass
Sign Up to like & getrecommendations! Published in 2021 at "Chinese Physics B"
DOI: 10.1088/1674-1056/ac11e7
Abstract: The determination of band offsets is crucial in the optimization of Ga2O3-based devices, since the band alignment types could determine the operations of devices due to the restriction of carrier transport across the heterogeneous interfaces.… read more here.
Keywords: fto heterojunction; ga2o3 fto; band offsets; band ... See more keywords
Effect of transition metals doping on electronic structure and optical properties of β-Ga2O3
Sign Up to like & getrecommendations! Published in 2021 at "Materials Research Express"
DOI: 10.1088/2053-1591/abde10
Abstract: The effects of transition metal (Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, and Zn) doping on the stability, electronic structure and optical properties of β-Ga2O3 have been studied using GGA and GGA +… read more here.
Keywords: transition; electronic structure; optical properties; structure optical ... See more keywords
Influence of Post-Annealing on Properties of α-Ga2O3 Epilayer Grown by Halide Vapor Phase Epitaxy
Sign Up to like & getrecommendations! Published in 2019 at "ECS Journal of Solid State Science and Technology"
DOI: 10.1149/2.0051907jss
Abstract: Effect of annealing to realize high-quality α-Ga2O3 epilayers grown by halide vapor phase epitaxy has been studied. The structural and optical properties of α-Ga2O3 changed with changing annealing duration. In particular, for an annealing duration… read more here.
Keywords: phase epitaxy; properties ga2o3; halide vapor; grown halide ... See more keywords