Properties of Gallium Oxide Films Obtained by HF-Magnetron Sputtering
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DOI: 10.1007/s11182-018-1302-0
Abstract: The results of an analysis of structure and phase composition of gallium oxide films obtained by HF-magnetron sputtering are presented. It is shown that in the interval 290–350 K, the increase in the film conductivity… read more here.
Keywords: magnetron sputtering; properties gallium; oxide films; obtained magnetron ... See more keywords
Transport properties of Gallium Phosphide based Schottky contact with thin insulating layer
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DOI: 10.1016/j.mssp.2017.01.009
Abstract: Abstract The current-voltage (I-V) characteristics of Au/n-GaP Schottky barrier diode was analyzed in wide temperature range of 220–400 K. The conduction mechanism in the low bias region, except for 220 K and 240 K, was identified as tunneling… read more here.
Keywords: properties gallium; temperature; transport properties; insulating layer ... See more keywords
Electrical and optical properties of gallium vacancy complexes in ammonothermal GaN
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DOI: 10.7567/apex.10.075506
Abstract: Bulk GaN crystals were grown by the acidic ammonothermal method and doped with oxygen at concentrations ranging from 1.5 × 1018 to 2.7 × 1019 cm−3. VGa complexes were detected by Fourier transform infrared (FTIR)… read more here.
Keywords: properties gallium; optical properties; vacancy complexes; electrical optical ... See more keywords