Articles with "properties gan" as a keyword



Photo from archive.org

Optical properties of In x Ga 1-x N/GaN quantum-disks obtained by selective area sublimation

Sign Up to like & get
recommendations!
Published in 2017 at "Journal of Crystal Growth"

DOI: 10.1016/j.jcrysgro.2017.01.010

Abstract: Abstract We study the cathodoluminescence (CL) and the photoluminescence (PL) properties of In x Ga 1−x N/GaN quantum disks (QDisks) included in nanowires obtained by selective area sublimation from an In x Ga 1−x N/GaN… read more here.

Keywords: obtained selective; gan quantum; properties gan; quantum disks ... See more keywords
Photo from archive.org

Growth and optical properties of GaN pyramids using in-situ deposited SiNx layer

Sign Up to like & get
recommendations!
Published in 2018 at "Materials Letters"

DOI: 10.1016/j.matlet.2018.04.089

Abstract: Abstract Self-assembled GaN pyramids were successfully fabricated on a SiNx layer that was grown in situ by metal-organic chemical vapor deposition. The diameter and height of a single pyramid was approximately 6–10 μm, and the structure… read more here.

Keywords: gan pyramids; sinx layer; properties gan; optical properties ... See more keywords
Photo by kellysikkema from unsplash

Photoluminescence Properties of GaN Nanowires Grown in a Gradient-Plasma Environment

Sign Up to like & get
recommendations!
Published in 2020 at "Journal of Physical Chemistry C"

DOI: 10.1021/acs.jpcc.0c04527

Abstract: Herein,we report the plasma effect on the surface defects of GaN nanowires (NWs). A gradient plasma growth system by microwave plasma chemical vapor deposition is demonstrated for NWs growth. The s... read more here.

Keywords: nanowires grown; properties gan; gan nanowires; photoluminescence properties ... See more keywords
Photo by sotti from unsplash

Crystallographic orientation control and optical properties of GaN nanowires

Sign Up to like & get
recommendations!
Published in 2018 at "RSC Advances"

DOI: 10.1039/c7ra11408g

Abstract: The optical and electrical properties of nitride materials are closely related to their crystallographic orientation. Here, we report our effort on crystallographic orientation manipulation of GaN NWs using vapour–liquid–solid hydride vapour phase epitaxy (VLS-HVPE). The… read more here.

Keywords: crystallographic orientation; gan nws; orientation; properties gan ... See more keywords