Optical properties of In x Ga 1-x N/GaN quantum-disks obtained by selective area sublimation
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2017.01.010
Abstract: Abstract We study the cathodoluminescence (CL) and the photoluminescence (PL) properties of In x Ga 1−x N/GaN quantum disks (QDisks) included in nanowires obtained by selective area sublimation from an In x Ga 1−x N/GaN… read more here.
Keywords: obtained selective; gan quantum; properties gan; quantum disks ... See more keywords
Growth and optical properties of GaN pyramids using in-situ deposited SiNx layer
Sign Up to like & getrecommendations! Published in 2018 at "Materials Letters"
DOI: 10.1016/j.matlet.2018.04.089
Abstract: Abstract Self-assembled GaN pyramids were successfully fabricated on a SiNx layer that was grown in situ by metal-organic chemical vapor deposition. The diameter and height of a single pyramid was approximately 6–10 μm, and the structure… read more here.
Keywords: gan pyramids; sinx layer; properties gan; optical properties ... See more keywords
Photoluminescence Properties of GaN Nanowires Grown in a Gradient-Plasma Environment
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Physical Chemistry C"
DOI: 10.1021/acs.jpcc.0c04527
Abstract: Herein，we report the plasma effect on the surface defects of GaN nanowires (NWs). A gradient plasma growth system by microwave plasma chemical vapor deposition is demonstrated for NWs growth. The s... read more here.
Keywords: nanowires grown; properties gan; gan nanowires; photoluminescence properties ... See more keywords
Crystallographic orientation control and optical properties of GaN nanowires
Sign Up to like & getrecommendations! Published in 2018 at "RSC Advances"
DOI: 10.1039/c7ra11408g
Abstract: The optical and electrical properties of nitride materials are closely related to their crystallographic orientation. Here, we report our effort on crystallographic orientation manipulation of GaN NWs using vapour–liquid–solid hydride vapour phase epitaxy (VLS-HVPE). The… read more here.
Keywords: crystallographic orientation; gan nws; orientation; properties gan ... See more keywords
Strain-tunable optoelectronic and photocatalytic properties of 2D GaN/MoSi2P4 heterobilayers: potential optoelectronic/photocatalytic materials.
Sign Up to like & getrecommendations! Published in 2025 at "Nanoscale"
DOI: 10.1039/d4nr04545a
Abstract: Herein, we propose a new GaN/MoSi2P4 van der Waals (vdWs) heterostructure constructed by vertically stacking GaN and MoSi2P4 monolayers. Its electronic, optical, and photocatalytic properties are explored via DFT+G0W0+BSE calculations. The calculated binding energy and… read more here.
Keywords: tunable optoelectronic; properties gan; optoelectronic photocatalytic; strain tunable ... See more keywords
Thermal properties of GaN layers on foreign vs native substrates: Enabling cost-effective solutions for vertical GaN-based transistors
Sign Up to like & getrecommendations! Published in 2025 at "Journal of Applied Physics"
DOI: 10.1063/5.0284946
Abstract: Gallium nitride (GaN) has gained significant traction in power electronics due to its high electron mobility and breakdown voltage. However, the high cost and small available size of native GaN substrates remain barriers to widespread… read more here.
Keywords: native gan; properties gan; thermal properties; gan ... See more keywords
Study of the photoluminescence properties of GaN irradiated with low fluence Ta ions
Sign Up to like & getrecommendations! Published in 2024 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/ad42ca
Abstract: The irradiation influences the properties of GaN. We studied the irradiation of n-type, p-type, and i-type GaN with 2.896 GeV Ta ions, with experimental irradiation fluence of 3 × 108, 3 × 109, and 2… read more here.
Keywords: properties gan; irradiation; fluence; photoluminescence properties ... See more keywords