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Published in 2017 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2017.01.010
Abstract: Abstract We study the cathodoluminescence (CL) and the photoluminescence (PL) properties of In x Ga 1−x N/GaN quantum disks (QDisks) included in nanowires obtained by selective area sublimation from an In x Ga 1−x N/GaN…
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Keywords:
obtained selective;
gan quantum;
properties gan;
quantum disks ... See more keywords
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Published in 2018 at "Materials Letters"
DOI: 10.1016/j.matlet.2018.04.089
Abstract: Abstract Self-assembled GaN pyramids were successfully fabricated on a SiNx layer that was grown in situ by metal-organic chemical vapor deposition. The diameter and height of a single pyramid was approximately 6–10 μm, and the structure…
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Keywords:
gan pyramids;
sinx layer;
properties gan;
optical properties ... See more keywords
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Published in 2020 at "Journal of Physical Chemistry C"
DOI: 10.1021/acs.jpcc.0c04527
Abstract: Herein,we report the plasma effect on the surface defects of GaN nanowires (NWs). A gradient plasma growth system by microwave plasma chemical vapor deposition is demonstrated for NWs growth. The s...
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Keywords:
nanowires grown;
properties gan;
gan nanowires;
photoluminescence properties ... See more keywords
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Published in 2018 at "RSC Advances"
DOI: 10.1039/c7ra11408g
Abstract: The optical and electrical properties of nitride materials are closely related to their crystallographic orientation. Here, we report our effort on crystallographic orientation manipulation of GaN NWs using vapour–liquid–solid hydride vapour phase epitaxy (VLS-HVPE). The…
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Keywords:
crystallographic orientation;
gan nws;
orientation;
properties gan ... See more keywords