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Published in 2021 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2021.159851
Abstract: Abstract The photoluminescence (PL) properties of InGaN/GaN multiple quantum wells (MQWs) structures grown by metal-organic chemical vapor deposition (MOCVD) with varying hydrogen (H2) treatments after GaN cap layer growth are investigated to elucidate the role…
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Keywords:
growth;
treatment;
photoluminescence properties;
properties ingan ... See more keywords
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Published in 2018 at "Journal of Applied Physics"
DOI: 10.1063/1.5020988
Abstract: The optical properties of thick InGaN epilayers, with compositions spanning the entire ternary range, are studied in detail. High structural quality, single phase InxGa1-xN (0001) films were grown heteroepitaxially by radio-frequency plasma assisted molecular-beam epitaxy…
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Keywords:
thin films;
range;
properties ingan;
optical properties ... See more keywords
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Published in 2023 at "AIP Advances"
DOI: 10.1063/5.0140589
Abstract: Scanning transmission electron microscope and temperature-dependent photoluminescence were used to study the effects of AlGaN interlayer (IL) following InGaN quantum wells (QWs) on the structural and optical properties of InGaN green laser diodes (LDs) grown…
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Keywords:
green laser;
properties ingan;
laser diodes;
algan interlayer ... See more keywords