Structural and electrical properties of Ge-on-Si(0 0 1) layers with ultra heavy n-type doping grown by MBE
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DOI: 10.1016/j.jcrysgro.2018.03.037
Abstract: Abstract In this paper we report about the formation of ultra heavy doped n-Ge layers on Si(0 0 1) substrates by molecular beam epitaxy and their characterization by different independent techniques. Combined study of structural and electrical… read more here.
Keywords: properties layers; structural electrical; crystalline quality; ultra heavy ... See more keywords