Effect of High Temperature Annealing on Crystal Structure and Electrical Properties of Multicrystalline Silicon by the Metallurgical Method
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DOI: 10.1007/s12633-019-00296-1
Abstract: The defects of dislocations and grain boundaries (GBs) could significantly reduce the electrical properties of multicrystalline silicon (mc-Si) solar cells. In this manuscript, the influence of crystal defects on the electrical properties of mc-Si was… read more here.
Keywords: multicrystalline silicon; high temperature; temperature annealing; properties multicrystalline ... See more keywords