Electronic and mechanical property of high electron mobility semiconductor Bi2O2Se
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DOI: 10.1016/j.jallcom.2018.06.120
Abstract: Abstract Using first-principles calculations combined with a semi-empirical van der Waals dispersion correction, we have investigated the structural, electronic and mechanical properties of Bi2O2Se. We predict that Bi2O2Se is a semiconductor with a band gap… read more here.
Keywords: electronic mechanical; semiconductor; high electron; property high ... See more keywords