Property manipulation through pulsed laser annealing in high dose Mg-implanted GaN
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DOI: 10.1063/5.0028760
Abstract: The generation of p-type GaN through ion implantation is an attractive proposition in the massive production of GaN-based bipolar devices, whereas the removal of implantation induced lattice disturbances and defects is a difficult exercise and… read more here.
Keywords: property manipulation; high dose; laser annealing; implanted gan ... See more keywords