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Published in 2017 at "IEEE Transactions on Power Electronics"
DOI: 10.1109/tpel.2016.2573643
Abstract: This paper presents a high-temperature (HT) gate drive and protection circuit for Silicon–Carbide (SiC) power mosfets entirely built from commercial off-the-shelf HT discrete components. To estimate cost reduction, a brief comparison was made between the…
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Keywords:
gate drive;
temperature gate;
drive protection;
high temperature ... See more keywords
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Published in 2021 at "IEEE Transactions on Power Electronics"
DOI: 10.1109/tpel.2020.3040727
Abstract: Similar to other power semiconductors, gallium nitride enhancement-mode high-electron-mobility transistors (GaN E-HEMTs) require short-circuit protection (SCP) or overcurrent protection (OCP) in practical applications. However, the fast-switching characteristic of GaN introduces the challenge to the protection.…
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Keywords:
circuit;
protection;
turn stage;
protection circuit ... See more keywords
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Published in 2023 at "Micromachines"
DOI: 10.3390/mi14030600
Abstract: The anti-ESD characteristic of the electronic system is paid more and more attention. Moreover, the on-chip electrostatic discharge (ESD) is necessary for integrated circuits to prevent ESD failures. In this paper, the mixed TCAD model…
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Keywords:
circuit;
protection circuit;
esd protection;
model ... See more keywords