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Published in 2020 at "Microelectronics Reliability"
DOI: 10.1016/j.microrel.2020.113949
Abstract: Abstract Thermal cycling during annealing step can induce stresses and consequently lead to the Cu protrusion in through-silicon via (TSV) structures. However, the relationship between the thermal stress in Si and the consequent Cu protrusion…
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Keywords:
protrusion;
silicon via;
spectroscopy;
relationship ... See more keywords