Leakage compensation scheme for ultra-high-resistance pseudo-resistors in neural amplifiers
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DOI: 10.1049/el.2017.4032
Abstract: Although MOS-based pseudo-resistors are capable of achieving the ultra-high resistance required to design small-area neural amplifiers, they suffer from substrate leakage currents which become dramatically higher when the devices are exposed to light. This can… read more here.
Keywords: pseudo; pseudo resistors; ultra high; high resistance ... See more keywords