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Published in 2020 at "IEEE Journal of the Electron Devices Society"
DOI: 10.1109/jeds.2020.3011635
Abstract: This paper details a robust parameter extraction flow for the PSPHV LDMOS transistor model. The procedure uses a global scaling parameter set and accounts for self-heating. We describe how to determine parameters associated with important…
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Keywords:
psphv ldmos;
ldmos transistor;
psphv;
parameter extraction ... See more keywords