A 20-V Pulse Driver Based on All-nMOS Charge Pump Without Reversion Loss and Overstress in 65-nm Standard CMOS Technology
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DOI: 10.1109/tvlsi.2024.3435974
Abstract: This article proposes a high-efficiency all-nMOS bidirectional charge pump (CP) cell and constructs a CP-based high-voltage (HV) pulse driver based on it. Double-diode substrate isolation (DDSI) can extend the maximum supported voltage in a bulk… read more here.
Keywords: cmos; loss; pulse driver; driver based ... See more keywords