Experimental study of pulse neutron irradiation damage in SiGe HBT
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DOI: 10.1080/00223131.2018.1512427
Abstract: ABSTRACT The response to transient irradiation of npn SiGe HBT (BG35 SiGe BiCMOS), i.e. device under test (DUT) was studied with online measurement of 1 MeV equivalent pulse neutron fluence of 0.8 × 1013n/cm2. The… read more here.
Keywords: 1013n cm2; neutron; irradiation; pulse neutron ... See more keywords