Room temperature pulsed-DC sputtering deposition process for CIGS absorber layer: Material and device characterizations
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DOI: 10.1016/j.tsf.2018.06.019
Abstract: Abstract A pulsed-DC sputtering process at room temperature has been developed for the deposition of the CIGS absorber layer. It uses a single quaternary target and is followed by a high temperature post-deposition annealing process.… read more here.
Keywords: pulsed sputtering; absorber layer; room temperature; deposition ... See more keywords
Optical characteristics of highly conductive n-type GaN prepared by pulsed sputtering deposition
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DOI: 10.1038/s41598-019-56306-0
Abstract: We have characterized highly conductive Si-doped GaN films with a high electron mobility of 112 cm2V−1s−1 at an electron concentration of 2.9 × 1020 cm−3, prepared using pulsed sputtering deposition (PSD). With an increase in the doping concentration,… read more here.
Keywords: sputtering deposition; pulsed sputtering; highly conductive; doped gan ... See more keywords
Growth of Si-doped AlN on sapphire (0001) via pulsed sputtering
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DOI: 10.1063/1.5051555
Abstract: The Si-doped AlN films were grown on sapphire (0001) by pulsed sputtering deposition (PSD), and their structural and electrical properties were investigated. A combination of PSD and high-temperature annealing process enabled the growth of high-quality… read more here.
Keywords: pulsed sputtering; sapphire; microscopy; doped aln ... See more keywords
Wide range doping controllability of p-type GaN films prepared via pulsed sputtering
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DOI: 10.1063/1.5079673
Abstract: The growth of Mg-doped GaN over a wide doping range is demonstrated via pulsed sputtering deposition (PSD). All samples show p-type conductivity without any post-growth annealing, and their room temperature (RT) hole concentration can be… read more here.
Keywords: pulsed sputtering; range; type gan; via pulsed ... See more keywords
Characteristics of unintentionally doped and lightly Si-doped GaN prepared via pulsed sputtering
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DOI: 10.1063/1.5103185
Abstract: We have grown structurally high-quality GaN with a low residual shallow donor concentration ( read more here.
Keywords: pulsed sputtering; lightly doped; doped lightly; doped gan ... See more keywords