Purely antiferromagnetic magnetoelectric random access memory
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DOI: 10.1038/ncomms13985
Abstract: Magnetic random access memory schemes employing magnetoelectric coupling to write binary information promise outstanding energy efficiency. We propose and demonstrate a purely antiferromagnetic magnetoelectric random access memory (AF-MERAM) that offers a remarkable 50-fold reduction of… read more here.
Keywords: access memory; random access; purely antiferromagnetic; memory ... See more keywords