Temperature and voltage dependence of barrier height and ideality factor in Au/0.07 graphene-doped PVA/n-Si structures
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DOI: 10.1007/s12648-016-0949-z
Abstract: In this study, Au/0.07 graphene-doped PVA/n-Si structures were fabricated and current conduction mechanism in these structures were investigated in the temperature range of 80–380 K through forward bias current–voltage (I–V) measurements. Main electrical parameters were extracted… read more here.
Keywords: barrier height; pva structures; ideality factor; doped pva ... See more keywords