The effect of AlN nucleation temperature on inverted pyramid defects in GaN layers grown on 200 mm silicon wafers
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DOI: 10.1016/j.jcrysgro.2016.11.049
Abstract: Abstract We have examined 200 mm GaN on silicon wafers, while varying the AlN nucleation temperature, and have found that higher temperatures result in a more convex bow on the wafers. In addition, by performing full… read more here.
Keywords: inverted pyramid; temperature; pyramid defects; silicon wafers ... See more keywords