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Published in 2023 at "Micromachines"
DOI: 10.3390/mi14030685
Abstract: A novel Schottky barrier MOSFET with quad gate and with source engineering has been proposed in this work. A high-κ dielectric is used at the source side of the channel, while SiO2 is used at…
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Keywords:
gate schottky;
schottky barrier;
quad gate;
source ... See more keywords